onsemi FDS2582
$ 0.635
Production
Inventory History
3 month trend: -52.45%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi FDS2582 provided by its distributors.
N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ
N-Channel 150 V 66 mOhm PowerTrench® Mosfet - SOIC-8
Trans MOSFET N-CH 150V 4.1A Automotive 8-Pin SOIC T/R
N CHANNEL MOSFET, 150V, 4.1A, SOIC
2.5W(Ta) 20V 4V@ 250¦ÌA 25nC@ 10V 1N 150V 66m¦¸@ 4.1A,10V 4.1A 1.29nF@25V SOIC-8 4.9mm*3.9mm*1.75mm
150V,4.1A,66 OHM,NCH,POWER TRENCH MOSFET
Fet 150V 66.0 Mohm So8 Rohs Compliant: Yes
Power Field-Effect Transistor, 4.1A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 150V, 4.5a .6 Ohms/VGS=1V
FET Input Operational Amplifier
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -52.45%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)4.1 A
Current Rating4.1 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance66 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.29 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max66 mΩ
Resistance66 MΩ
Rise Time19 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)150 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements