Vishay SI4840BDY-T1-E3

Name: Vishay SI4840BDY-T1-E3
Brand: Vishay
SKU: SI4840BDY-T1-E3

Single N-Channel 40 V 9 mOhm Surface Mount Power Mosfet - SOIC-8

$ 0.692

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark	2	SI4840BDY-T1-E3	2,500	1	Cut Tape	1.850	1.430	1.200	1.200	1.200
Arrow Electronics	2	SI4840BDY-T1-E3	2,485	1		0.759	0.713	0.658	0.655	0.655
Verical	3	SI4840BDY-T1-E3	2,500	2500						0.344
CoreStaff		ST40500048	2	1		0.765	0.765	0.552	0.493	0.487	11h
TME	2	SI4840BDY-E3	2,043	1		2.130	1.467	0.956	0.692	0.592	15h

Inventory History

3 month trend: +4.89%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI4840BDY-T1-E3.

Upverter

Datasheet9 pages8 years ago

Newark

TME

Farnell

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+4.89%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI4840BDY-T1-E3 provided by its distributors.

Single N-Channel 40 V 9 mOhm Surface Mount Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC

Win Source

2.5W(Ta),6W(Tc) 20V 3V@ 250¦ÌA 50nC@ 10 V 1N 40V 9m¦¸@ 12.4A,10V 19A 2nF@20V SOIC-8 1.75mm

UnikeyIC

MOSFET N-CH 40V 19A 8SOIC | Siliconix / Vishay SI4840BDY-T1-E3

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 19A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N CHANNEL, 40V, 19A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: No

Newark

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.4A; Junction Temperature Tj Max:150°C; Package / Case:SOIC-8; Power Dissipation Pd:6W; Power Dissipation Pd:2.5W; Rise Time:150ns; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

element14 APAC