Descriptions of Infineon IRF7821TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 30 V 9.1 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
Power MOSFET, N Channel, 30 V, 13.6 A, 0.007 ohm, SOIC, Surface Mount
MOSFET N-CH 30V 13.6A 8SO N-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
Infineon N-Ch MOSFET HEXFET Vds=30V 13.6A SOIC SMD 8-Pin
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Tran; N CHANNEL MOSFET, 30V, 13.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Vol; Available until stocks are exhausted Alternative available
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Tran; N CHANNEL MOSFET, 30V, 13.6A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:8