Infineon IRF7821PBF

Name: Infineon IRF7821PBF
Brand: Infineon
SKU: IRF7821PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 7 Milliohms; Id 13.6A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.55

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7821PBF	0	5	Bulk	0.610	0.550	0.550	0.550	14h
Farnell	IRF7821PBF	0	5		0.859*	0.438*	0.410*	0.402*	8h
Microchip USA	IRF7821PBF	271	3500	Bulk				0.295	4d
Win Source	WS-IRF7821PBF	3,950	15			2.866	2.754	2.754	22h
Worldway Electronics	IRF7821PBF	12,740	7	Tube	0.076	0.074	0.070	0.070	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7821PBF.

element14 APAC

Datasheet10 pages18 years ago

IHS

Newark

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-05-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7821PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 30 Volt 13.6.6 Amp 8 Pin SOIC

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Future Electronics

Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC

Avnet

Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7821PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

element14 APAC