Vishay SI4166DY-T1-GE3
$ 0.671
Production
Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-03
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
Descriptions
Descriptions of Vishay SI4166DY-T1-GE3 provided by its distributors.
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 20.5A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)20.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.73 nF
Max Operating Temperature150 °C
Max Power Dissipation6.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max3.9 mΩ
Resistance3.9 MΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time35 ns
Turn-On Delay Time30 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements