Vishay SI3590DV-T1-GE3

Name: Vishay SI3590DV-T1-GE3
Brand: Vishay
SKU: SI3590DV-T1-GE3

Mosfet N/p-ch 30V 2.5A 6-TSOP / Trans Mosfet N/p-ch 30V 2.5A/1.7A 6-PIN TSOP T/r

$ 0.53

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		SI3590DV-T1-GE3	6,000	3K						0.256	3d
Arrow Electronics		SI3590DV-T1-GE3	61,850	1		0.518	0.457	0.449	0.410	0.376
Verical		SI3590DV-T1-GE3	61,848	24				0.450	0.411	0.377
DigiKey	2	SI3590DV-T1-GE3CT-ND	33	1	Cut Tape	1.390	0.871	0.871	0.871	0.871
Newark		SI3590DV-T1-GE3	0	3K	Cut Tape					0.683

Inventory History

3 month trend: +52.04%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI3590DV-T1-GE3.

IHS

Datasheet11 pages3 years ago

Upverter

Farnell

element14 APAC

Newark

Inventory History

3 month trend:

+52.04%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI3590DV-T1-GE3

VishaySI3590DV-T1-E3

Price @ 1000

$ 0.53

$ 0.897

Stock

1,907,044

898,488

Authorized Distributors

Mount

Surface Mount

Case/Package

TSOP

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

2.5 A

Threshold Voltage

1.5 V

Rds On Max

77 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

830 mW

Input Capacitance

Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-02-13

LTD Date2025-08-13

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Descriptions

Descriptions of Vishay SI3590DV-T1-GE3 provided by its distributors.

MOSFET N/P-CH 30V 2.5A 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R

Win Source

830mW 12V 1.5V@ 250¦ÌA 4.5nC@ 4.5V 2N+2P 30V 77m¦¸@ 3A,4.5V 2.5A,1.7A 450pF TSOP-6 3.05mm*1.65mm*1mm

UnikeyIC

N- AND P-CHANNEL 30-V (D-S) MOSFET

Vishay

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

30V 3.0/2.0A 1.15W 77/170MOHM @ 4.5V

RS (Formerly Allied Electronics)

MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.062ohm; Power Dissipation Pd:830mW

Farnell