onsemi NTGD4169FT1G
Obsolete
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-07
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-07-21
LTD Date2011-01-21
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Related Parts
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Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonBSL211SP L6327
MOSFET, P-CH, 20V, 4.7A, 6TSOP; Transistor Polarity:P Channel; Continuous Drain
Descriptions
Descriptions of onsemi NTGD4169FT1G provided by its distributors.
Small Signal MOSFET 30V 2.6A 90 mOhm Dual N-Channel TSOP6 FETKY
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 2.6A Ta 2.6A 900mW 4ns
Trans MOSFET N-CH 30V 2.6A 6-Pin TSOP T/R
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance295 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage30 V
Min Operating Temperature-25 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation900 mW
Rds On Max90 mΩ
Rise Time4 ns
Turn-Off Delay Time14 ns
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
RoHSCompliant
Compliance Statements