Vishay SI2319DS-T1-GE3

Name: Vishay SI2319DS-T1-GE3
Brand: Vishay
SKU: SI2319DS-T1-GE3

Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 st.C; SMD; SOT23

$ 0.466

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Verical		SI2319DS-T1-GE3	1,760	125					0.466	0.466
TME	2	SI2319DS-T1-GE3	1,760	1		0.887*	0.750*	0.531*	0.417*	0.402*	8h
TTI		SI2319DS-T1-GE3	0	3K	Tape & Reel					0.242	21h
Newark		SI2319DS-T1-GE3	0	3K	Cut Tape					0.632
Avnet		SI2319DS-T1-GE3	0	3K							21h

Inventory History

3 month trend: -1.25%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2319DS-T1-GE3.

Newark

Datasheet8 pages5 years ago

Datasheet6 pages15 years ago

Datasheet6 pages16 years ago

Datasheet6 pages17 years ago

Datasheet9 pages11 years ago

element14 APAC

Farnell

Future Electronics

ODG (Origin Data Global)

Inventory History

3 month trend:

-1.25%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI2319DS-T1-GE3

VishaySI2319DS-T1-E3

Price @ 1000

$ 0.466

$ 0.428

Stock

1,416,277

505,067

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

-40 V

Continuous Drain Current (ID)

2.3 A

Threshold Voltage

-3 V

Rds On Max

82 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

750 mW

Input Capacitance

470 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-02-13

LTD Date2025-08-13

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Descriptions

Descriptions of Vishay SI2319DS-T1-GE3 provided by its distributors.

Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 st.C; SMD; SOT23

Maritex

P-Channel 40 V 82 mO 17 nC Surface Mount Power Mosfet - SOT-23

Future Electronics

750mW(Ta) 20V 3V@ 250¦ÌA 17nC@ 10 V 1P 40V 82m¦¸@ 3A,10V 2.3A 470pF@20V SOT-23-3,TO-236 1.12mm

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Avnet

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW

element14 APAC