Diodes Inc. DMP3099L-7
$ 0.092
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMP3099L-7 | 1 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMP3099L-7 | 18 | 18 | |||||||||
| Verical | DMP3099L-7 | 36,000 | 3K | |||||||||
| Future Electronics | DMP3099L-7 | 1,968,000 | 3K | Tape & Reel | ||||||||
| Rutronik | TMOSS6836 | 3,000 | 3K | 22h |
Inventory History
3 month trend: -22.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of Diodes Inc. DMP3099L-7 provided by its distributors.
DMP3099L Series 30 V 65 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
Power MOSFET, P Channel, 30 V, 3.8 A, 0.065 ohm, SOT-23, Surface Mount
MOSFET P-CH 30V SOT23 / Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -22.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance563 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.08 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.08 W
Rds On Max65 mΩ
Rise Time5 ns
Schedule B8541290080
Threshold Voltage-2.1 V
Turn-Off Delay Time31 ns
Turn-On Delay Time4.8 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant