onsemi FDN357N

Name: onsemi FDN357N
Brand: onsemi
SKU: FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ

$ 0.202

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Distributor		SKU		Min	Pkg
Avnet	3	FDN357N	1,126	5556						0.120	3d
Newark	3	FDN357N	104	1	Cut Tape	0.803	0.501	0.323	0.247	0.247
Verical	8	FDN357N	60,000	3K						0.148
Arrow Electronics	3	FDN357N	3,000	1		0.419	0.302	0.248	0.202	0.150
Master Electronics		FDN357N	7,450	250					0.131	0.126

Inventory History

3 month trend: +67.72%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDN357N.

IHS

Datasheet5 pages28 years ago

Datasheet7 pages3 years ago

Upverter

Future Electronics

onsemi

Farnell

Inventory History

3 month trend:

+67.72%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDN357N provided by its distributors.

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ

onsemi

MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW

Distrelec

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V

element14 APAC

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor