Vishay SI2315BDS-T1-E3

Name: Vishay SI2315BDS-T1-E3
Brand: Vishay
SKU: SI2315BDS-T1-E3

Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23

$ 0.481

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark	2	SI2315BDS-T1-E3	0	3K	Tape & Reel
TTI Asia		SI2315BDS-T1-E3	Contact							0.264	4h
TTI Europe		SI2315BDS-T1-E3	0	3K	Tape & Reel						4h
Mouser		781-SI2315BDS-E3	114,044	1	Tape & Reel	1.190	0.732	0.481	0.481	0.411
Weyland Electronics Group Pte. Ltd.		SI2315BDS-T1-E3	3,013	1	Tape & Reel	0.165	0.165	0.165	0.165	0.165	1h

Inventory History

3 month trend: -13.10%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2315BDS-T1-E3.

Newark

Datasheet8 pages5 years ago

Datasheet9 pages10 years ago

Datasheet9 pages11 years ago

Datasheet6 pages20 years ago

ODG (Origin Data Global)

Farnell

Future Electronics

TME

Inventory History

3 month trend:

-13.10%

CAD Models

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Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-10-03

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2025-01-21

LTD Date2025-07-21

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Descriptions

Descriptions of Vishay SI2315BDS-T1-E3 provided by its distributors.

Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23

Future Electronics

Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23

Jak Electronics

Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R

Verical

Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

Mosfet, P Channel, -12V, -3A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:750Mw Rohs Compliant: No |Vishay SI2315BDS-T1-E3.

Newark

MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:12V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.9V; Voltage, Vgs th Min:-0.45V; Width, Tape:8mm

Farnell