Vishay SI2308BDS-T1-GE3

Name: Vishay SI2308BDS-T1-GE3
Brand: Vishay
SKU: SI2308BDS-T1-GE3

VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V

$ 0.277

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	SI2308BDS-T1-GE3	13,906	1	Cut Tape	0.899	0.899	0.437	0.310	0.310
Arrow Electronics		SI2308BDS-T1-GE3	14,039	1		0.828	0.514	0.376	0.247	0.198
Verical		SI2308BDS-T1-GE3	14,025	33				0.308	0.308	0.308
CoreStaff		ST63699850	3,000	1		0.382	0.382	0.296	0.240	0.235	3h
Conrad		597300	152			0.587*	0.587*	0.587*	0.587*	0.587*	16h

Inventory History

3 month trend: -57.45%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2308BDS-T1-GE3.

Farnell

Datasheet9 pages5 years ago

Datasheet10 pages13 years ago

Datasheet7 pages15 years ago

Datasheet7 pages16 years ago

Datasheet10 pages11 years ago

Upverter

element14 APAC

Future Electronics

TME

Inventory History

3 month trend:

-57.45%

CAD Models

Download Vishay SI2308BDS-T1-GE3 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

VishaySI2308BDS-T1-GE3

VishaySI2308BDS-T1-E3

Price @ 1000

$ 0.277

$ 0.225

Stock

1,623,349

604,179

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

1.9 A

Threshold Voltage

1 V

Rds On Max

54 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.09 W

Input Capacitance

190 pF

Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-03-13

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-01-21

LTD Date2025-07-21

Related Parts

Diodes Inc.ZXMN6A07FTA

ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

Details

Diodes Inc.ZXMP6A17E6TA

ZXMP6A17 Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-23-6

Details

Diodes Inc.BS170FTA

BS170 Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23

Details

onsemiMMBF170

Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Details

onsemi2N7002

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω

Details

onsemi2N7002MTF

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.115A SOT-23

Details

Descriptions

Descriptions of Vishay SI2308BDS-T1-GE3 provided by its distributors.

VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V

Fly-Wing Technology

SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23

Future Electronics

MOSFET, N-CH, VDS 60V, VGS +/- 20V, RDS(ON) 192MOHM, ID 2.3A, SOT-23, PD 1.66W

RS (Formerly Allied Electronics)

MOSFET,N CH,60V,2.3A,SOT23-3; Transistor Polarity:N Channel; Max Current Id:1.9A; Max Voltage Vds:60V; On State Resistance:130mohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.09W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3

Farnell