onsemi 2N7002

Name: onsemi 2N7002
Brand: onsemi
SKU: 2N7002

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω

$ 0.146

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	4	2N7002	231,000	3K						0.030	3d
Future Electronics	2	2N7002	222,000	3K	Tape & Reel					0.040
Newark	2	2N7002	12,995	1	Cut Tape	0.632	0.632	0.272	0.216	0.216
Arrow Electronics	2	2N7002	2,292,000	3K						0.025
Verical	4	2N7002	455	260					0.023	0.023

Inventory History

3 month trend: -1.92%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi 2N7002.

IHS

Datasheet12 pages2 years ago

Datasheet0 pages0 years ago

Datasheet2 pages0 years ago

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onsemi

Inventory History

3 month trend:

-1.92%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemi2N7002

onsemi2N7002LT1G

Price @ 1000

$ 0.146

$ 0.057

Stock

13,952,834

179,734,968

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

115 mA

Threshold Voltage

2.1 V

1 V

Rds On Max

7.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 mW

225 mW

Input Capacitance

50 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi 2N7002 provided by its distributors.

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω

onsemi

N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23

Future Electronics

Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R

Avnet Japan

Power MOSFET, N Channel, 60 V, 280 mA, 5 ohm, SOT-23, Surface Mount

Avnet

MOSFET, N, 60V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissip

Farnell

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 200

Distrelec

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Fairchild Semiconductor