onsemi MMBF170

Name: onsemi MMBF170
Brand: onsemi
SKU: MMBF170

Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 0.082

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	MMBF170	156,000	3K						0.035	2d
Future Electronics	2	MMBF170	48,000	3K	Tape & Reel					0.042
Newark	3	MMBF170	7,052	1	Cut Tape	0.316	0.316	0.128	0.099	0.099
Verical	5	MMBF170	51,000	3K						0.030
Arrow Electronics	4	MMBF170	6,369	1		0.275	0.170	0.095	0.074	0.044

Inventory History

3 month trend: -4.61%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBF170.

IHS

Datasheet11 pages4 years ago

Datasheet2 pages0 years ago

JRH Electronics

Farnell

Upverter

TME

Inventory History

3 month trend:

-4.61%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMMBF170

Price @ 1000

$ 0.082

Stock

3,346,516

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

500 mA

Threshold Voltage

2.1 V

Rds On Max

5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

550 mW

Input Capacitance

40 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MMBF170 provided by its distributors.

Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Semicontronic

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 300

Distrelec

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Fairchild Semiconductor