onsemi HGTG30N60C3D

Name: onsemi HGTG30N60C3D
Brand: onsemi
SKU: HGTG30N60C3D

600V, 63A, Ufs, Series Nch Igbt W/anti-parallel Hyperfast Diode

$ 4.917

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet		HGTG30N60C3D	1,560	109				5.885	5.667	19h
Verical	4	HGTG30N60C3D	77	2		4.703	4.703	4.703	4.703
Arrow Electronics		HGTG30N60C3D	77	1	4.703	4.703	4.703	4.703	4.703
Rochester Electronics		HGTG30N60C3D	5,413				5.730	5.130	4.820	16h
Flip Electronics		HGTG30N60C3D	780							4d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTG30N60C3D.

element14 APAC

Datasheet0 pages0 years ago

Datasheet8 pages17 years ago

Datasheet0 pages0 years ago

onsemi

IHS

Upverter

Future Electronics

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiHGTG30N60C3D

onsemiHGTG30N60C3D_NL

Price @ 1000

$ 4.917

$ 2.73

Stock

164,129

18,837

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247

Collector Emitter Breakdown Voltage

600 V

Max Collector Current

63 A

Power Dissipation

208 W

Collector Emitter Saturation Voltage

1.5 V

Reverse Recovery Time

60 ns

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-08-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi HGTG30N60C3D provided by its distributors.

600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE

Master Electronics

600 V, 63 A, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247

ComSIT Distribution GmbH

IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

Farnell

IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

Newark

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

Fairchild Semiconductor