STMicroelectronics STGW35NB60SD
$ 3.53
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STGW35NB60SD.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-11-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-11
LTD Date2023-03-11
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Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
Descriptions
Descriptions of STMicroelectronics STGW35NB60SD provided by its distributors.
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
STGW35NB60SD, IGBT Transistor, 75 A 600 V, 1MHz, 3-Pin TO-247
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AA
STMICROELECTRONICS STGW35NB60SD IGBT Single Transistor, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 Pins
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
Igbt |Stmicroelectronics STGW35NB60SD
70 A 600 V N-CHANNEL IGBT TO-247AA
N-CHANNEL 35A - 600V IGBTTO 247<AZ
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Drain Current (ID)70 A
Current Rating35 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current70 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Reverse Recovery Time44 ns
Rise Time70 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STGW35NB60SD.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant