onsemi FQB7P20TM_F085
Obsolete
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-03-31
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Descriptions
Descriptions of onsemi FQB7P20TM_F085 provided by its distributors.
Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P CH, -200V, -7.3A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7.3 A
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)-200 V
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance770 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Rds On Max690 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements