Infineon SI4410DYTRPBF

Name: Infineon SI4410DYTRPBF
Brand: Infineon
SKU: SI4410DYTRPBF

Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	SI4410DYTRPBF	0	4K	Bulk					1.510	16h
Farnell	SI4410DYTRPBF	0	1		0.989*	0.798*	0.542*	0.373*	0.373*	10h
Win Source	WS-SI4410DYTRPBF	260	18				2.206	1.912	1.912	1d
Worldway Electronics	SI4410DYTRPBF	14,222	7	Tape & Reel		0.567	0.550	0.521	0.521	3d
ICPartonline	SI4410DYTRPBF	11,873			0.423	0.401	0.380	0.359	0.338	>1wk

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SI4410DYTRPBF.

Newark

Datasheet8 pages21 years ago

IHS

Farnell

Components Direct

RS (Formerly Allied Electronics)

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Alternate Parts

This Part

Alternate Parts

InfineonSI4410DYTRPBF

onsemiSI4410DY

Price @ 1000

$ 0.629

Stock

1,106,437

88,839

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

10 A

Threshold Voltage

1 V

Rds On Max

13.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.585 nF

1.35 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-09-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

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Descriptions

Descriptions of Infineon SI4410DYTRPBF provided by its distributors.

Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID +/-10A;SO-8;PD 2.5W;VGS +/-20V;-5

RS (Formerly Allied Electronics)

Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

Infineon

Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R

Verical

MOSFET, N CH, 30V, 10A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell