Infineon IRF7201TRPBF
$ 0.441
Obsolete
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Inventory History
3 month trend: +133%
CAD Models
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Alternate Parts
0 parts available
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descriptions
Descriptions of Infineon IRF7201TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
MOSFET N-CH 30V 7.3A 8-SOIC / Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R
MOSFET N-CH 30V 7.3A 8SO N-Channel 30 V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
N CHANNEL MOSFET, 30V, 7A; Transistor PO; Polarity:N Channel; Continuous Drain Current Id:7A; Source
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 30V, 7.3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; R; Available until stocks are exhausted Alternative available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
N Channel Mosfet, 30V, 7A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:1V; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies IRF7201TRPBF
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +133%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7.3 A
Current Rating7.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance550 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance30 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max30 mΩ
Resistance30 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time21 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements