Infineon IRF7403PBF

Name: Infineon IRF7403PBF
Brand: Infineon
SKU: IRF7403PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.022 Ohm; Id 8.5A; SO-8; Pd 2.5W; Vgs +/-20V; Vf

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7403PBF	0	3800	Bulk					1.130	7h
Farnell	IRF7403PBF	0	1		2.518*	2.518*	1.768*	1.527*	1.527*	11h
Win Source	WS-IRF7403PBF	4,980	3			13.714	11.143	11.143	11.143	16h
Worldway Electronics	IRF7403PBF	9,380	7	Tube		4.057	3.933	3.726	3.726	15h
ICPartonline	IRF7403PBF	12,253			0.377	0.358	0.339	0.320	0.301	>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7403PBF.

IHS

Datasheet10 pages21 years ago

Datasheet9 pages21 years ago

TME

RS (Formerly Allied Electronics)

Jameco

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

Related Parts

InfineonIRF7403TRPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF

Details

VishaySI4830CDY-T1-GE3

Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8

Details

VishaySI4128DY-T1-GE3

N-Channel 30 V 0.024 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

Details

InfineonSI4410DYTRPBF

Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8

Details

STMicroelectronicsSTS11NF30L

N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET

Details

InfineonIRF7201TRPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d

Details

Descriptions

Descriptions of Infineon IRF7403PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.5A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:27A; Row Pitch:6.3mm; SMD Marking:F7403; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

element14 APAC