Infineon IRS2111SPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

Tube IRS2111SPBF Half-Bridge 1996 gate driver 130ns -40C~150C TJ 290mA 600mA 625mW

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube

MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC Tube

HALF BRIDGE DRIVER, FIXED 650NS DEADTIME IN A 8-LEAD SOIC PACKAGE

Gate Drivers The factory is currently not accepting orders for this product

IC, HALF BRIDGE DRIVER, SMD, SOIC8; No. of Outputs:2; Output Current:290mA; Output Voltage:620V; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2111; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:0.2A; Output Voltage Max:20V; Package / Case:SOIC; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels; Internally set deadtime; High-side output in phase with input