Infineon IRS2609DSPBF

Tube IRS2609DSPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW

Driver 0.35A 1-OUT High and Low Side Half Brdg Inv 8-Pin SOIC N Tube

High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels packaged in a 8-Pin SOIC

Driver; Device Type:IGBT/MOSFET; No. of Outputs:2; Output Voltage:600V; Output Current:500mA; Channel Configuration:2/2; Supply Voltage Min:10V; Supply Voltage Max:20V; Package/Case:8-SOIC; No. of Pins:8; Offset Voltage:60V ;RoHS Compliant: Yes

IC, GATE DRIVER, HV, 3PHASE, SOIC; Device Type:IGBT / MOSFET; Module Configuration:Half Bridge; Peak Output Current:350mA; Input Delay:750ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Channel Configuration:2/2; No. of Outputs:1; Output Current:350mA; Output Voltage:620V; Package / Case:SOIC; Power Dissipation Pd:625mW; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V logic compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High side output in phase with HIN input; Internal 540 ns deadtime; Lower di/dt gate driver for better noise immunity; Shut down input turns off both channels; Integrated Bootstrap Diode