Infineon IRLL2705PBF

Name: Infineon IRLL2705PBF
Brand: Infineon
SKU: IRLL2705PBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 3.8A; SOT-223; Pd 1W; Vgs +/-16V; -55

$ 0.67

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLL2705PBF	0	1	Bulk	0.760	0.670	0.670	0.670	0.670	5h
Farnell	IRLL2705PBF	0	5			0.797*	0.394*	0.362*	0.355*	3h
Win Source	WS-IRLL2705PBF	71,910	210					0.204	0.189	4h
Worldway Electronics	IRLL2705PBF	17,618	7	Tube		0.074	0.072	0.068	0.068	3h
Chipsmall Limited	IRLL2705PBF	2,001,224	1		0.579	0.386	0.232	0.193	0.193	3h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLL2705PBF.

IHS

Datasheet10 pages21 years ago

Datasheet9 pages21 years ago

Newark

TME

RS (Formerly Allied Electronics)

Jameco

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLL2705PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.04 Ohm 32 nC HEXFET® Power Mosfet - SOT-223-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Distrelec

Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 Pb free

Avnet

Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 3.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:30A; SMD Marking:LL2705; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

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