Infineon IRLL024NPBF

Name: Infineon IRLL024NPBF
Brand: Infineon
SKU: IRLL024NPBF

Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223

$ 0.392

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRLL024NPBF	91				0.305	0.253	0.226	1d
RS (Formerly Allied Electronics)		IRLL024NPBF	0	5	Bulk	0.600	0.530	0.530	0.530	15h
Farnell		IRLL024NPBF	0	5		0.725*	0.332*	0.298*	0.292*	19h
Win Source		WS-IRLL024NPBF	45,700	220				0.210	0.181	28m
Worldway Electronics		IRLL024NPBF	10,420	7	Tube	0.061	0.059	0.056	0.056	1d

Inventory History

3 month trend: -49.72%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLL024NPBF.

Newark

Datasheet8 pages22 years ago

IHS

TME

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-49.72%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-06-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLL024NPBF provided by its distributors.

Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223

Maritex

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.08 Ohm 10.4 nC HEXFET® Power Mosfet - SOT-223

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Distrelec

Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 55V, 4.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:120°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:12A; SMD Marking:LL024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

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