Descriptions of Infineon IRLL024NTRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 3.1A SOT223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
IRLL024NTRPBF,MOSFET, 55V, 4.4 A, 65 MOHM, 10.4 NC QG, LOGIC
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.4A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:223-SOT; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 25 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1