Infineon IRLL014NPBF

Name: Infineon IRLL014NPBF
Brand: Infineon
SKU: IRLL014NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.14 Ohm; Id 2.8A; SOT-223; Pd 2.1W; Vgs +/-16V

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLL014NPBF	0	2320	Bulk					0.590	1d
Farnell	IRLL014NPBF	0	1		0.551*	0.551*	0.551*	0.551*	0.551*	7h
Win Source	WS-IRLL014NPBF	27,060	270					0.171	0.147	8h
Worldway Electronics	IRLL014NPBF	15,103	7	Tube		0.053	0.051	0.048	0.048	7h
Voyager Components	IRLL014NPBF-IR-1005	900			0.754	0.754	0.570	0.318	0.318	14h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLL014NPBF.

Newark

Datasheet9 pages22 years ago

IHS

element14 APAC

RS (Formerly Allied Electronics)

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-10-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Transistor,Mosfet,N-Channel,55V V(Br)Dss,2.6A I(D),Sot-223 Rohs Compliant: Yes

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Descriptions

Descriptions of Infineon IRLL014NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

Single N-Channel 55 V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223

Future Electronics

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Distrelec

Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 Tube

Verical

Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:16A; SMD Marking:LL014N; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC