Infineon IRFL014NTRPBF

Name: Infineon IRFL014NTRPBF
Brand: Infineon
SKU: IRFL014NTRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.16 Ohm; Id 1.9A; SOT-223; Pd 2.1W; Vgs +/-20V

$ 0.28

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Distributor		SKU		Min	Pkg
Newark	3	IRFL014NTRPBF	292	1	Cut Tape	1.040	0.680	0.488	0.377	0.377
Future Electronics	2	IRFL014NTRPBF	105,000	2500	Tape & Reel					0.191
Rutronik		TMOSS6766	2,500	2500						0.195	10h
Rochester Electronics		IRFL014NTRPBF	150					0.246	0.204	0.182	3h
Arrow Electronics	2	IRFL014NTRPBF	2,665	1		0.760	0.530	0.370	0.263	0.204

Inventory History

3 month trend: -8.10%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFL014NTRPBF.

Newark

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

Arrow Electronics

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-8.10%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-01-21

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IRFL014NTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V

RS (Formerly Allied Electronics)

Trans MOSFET N-CH Si 55V 2.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 1.9A SOT223

Win Source

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFL014NTRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 3.3 / Rise Time ns = 7.1 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1

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