Infineon IRLL014NTRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.14 Ohm; Id 2.8A; SOT-223; Pd 2.1W; Vgs +/-16V
$ 0.289
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLL014NTRPBF.

Newark

Datasheet10 pages22 years ago
Datasheet9 pages22 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:
+15.51%

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Alternate Parts

Price @ 1000
$ 0.289
$ 0.327
Stock
2,491,369
279,312
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223-4
Drain to Source Voltage (Vdss)
55 V
60 V
Continuous Drain Current (ID)
2 A
2.8 A
Threshold Voltage
2 V
2.5 V
Rds On Max
140 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
Power Dissipation
2.1 W
2.1 W
Input Capacitance
230 pF
350 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-10-07
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V
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Protected Power MOSFET, N-Channel, Clamped, Logic Level, 2.6 A, 52 V, with ESD Protection
Transistor,Mosfet,N-Channel,55V V(Br)Dss,2.6A I(D),Sot-223 Rohs Compliant: Yes

Descriptions

Descriptions of Infineon IRLL014NTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
IRLL014NTRPBF,MOSFET, 55V, 2A, 140 MOHM, 9.5 NC QG, LOGIC LE
Trans MOSFET N-CH 55V 2.8A 4-Pin (3+Tab) SOT-223 T/R
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon Technologies IRLL014NTRPBF.
MOSFET, N CH 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 140 / Gate-Source Voltage V = 16 / Fall Time ns = 2.9 / Rise Time ns = 4.9 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFIRLL014NTRPBF
  • IRLL014NTRPBF.
  • SP001578654