Infineon IRFL014NPBF

Name: Infineon IRFL014NPBF
Brand: Infineon
SKU: IRFL014NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.16 Ohm; Id 1.9A; SOT-223; Pd 2.1W; Vgs +/-20V

$ 0.52

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFL014NPBF	0	5	Bulk		0.580	0.520	0.520	0.520	23h
Farnell	IRFL014NPBF	0	5			0.635*	0.295*	0.246*	0.236*	6h
Win Source	WS-IRFL014NPBF	20	105					0.327	0.327	7h
Worldway Electronics	IRFL014NPBF	15,203	7	Tube		0.209	0.203	0.192	0.192	6h
Anlinkda	IRFL014NPBF	72,288			0.102	0.092	0.083	0.080	0.079	13h

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFL014NPBF.

IHS

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

Newark

TME

RS (Formerly Allied Electronics)

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-01-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFL014NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Distrelec

Trans MOSFET N-CH 55V 2.7A 4-Pin(3+Tab) SOT-223

Avnet

Power Field-Effect Transistor, 1.9A I(D), 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N Channel Mosfet, 55V, 1.9A Sot-223; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:1.9A; On Resistance Rds(On):0.16Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

MOSFET, N, 55V, 1.9A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Avalanche Single Pulse Energy Eas:48mJ; Capacitance Ciss Typ:190pF; Charge Qrr @ Tj = 25°C Typ:64nC; Current Iar:1.7A; Current Id Max:1.9A; Current Idss Max:1µA; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Fall Time tf:3.3ns; Full Power Rating Temperature:25°C; Gfs Min:1.6A/V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:120°C/W; No. of Transistors:1; On State Resistance Max:160mohm; Package / Case:SOT-223; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Power Dissipation Ptot Max:2.1W; Power Dissipation on 1 Sq. PCB:1W; Pulse Current Idm:15A; Rise Time:7.1ns

element14 APAC