Infineon IRGB4061DPBF

Name: Infineon IRGB4061DPBF
Brand: Infineon
SKU: IRGB4061DPBF

Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 18A 36A 206W 100ns

$ 1.32

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRGB4061DPBF	4					1.470	1.320	1.240	11h
RS (Formerly Allied Electronics)	IRGB4061DPBF	0	350	Bulk				7.220	6.500	2h
Win Source	WS-IRGB4061DPBF	11,300	35				1.380	1.122	1.122	12h
Worldway Electronics	IRGB4061DPBF	13,165	7	Tube		1.399	1.373	1.320	1.294	11h
Aztech	IRGB4061DPBF	280			15.260	15.260	15.260	15.260	15.260	6h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB4061DPBF.

IHS

Datasheet2 pages14 years ago

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRGB4061DPBF

InfineonIKP20N60TXKSA1

Price @ 1000

$ 1.32

$ 1.07

Stock

154,605

398,089

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Collector Emitter Breakdown Voltage

600 V

Max Collector Current

36 A

40 A

Power Dissipation

206 W

166 W

Collector Emitter Saturation Voltage

1.65 V

2.05 V

Reverse Recovery Time

100 ns

41 ns

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-02-24

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2019-02-28

LTD Date2019-08-31

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Descriptions

Descriptions of Infineon IRGB4061DPBF provided by its distributors.

Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 18A 36A 206W 100ns

Fly-Wing Technology

Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-220AB

Avnet

IRGB4061DPBF Series 600 V 18 A N-Channel Bipolar Transistor IGBT - TO-220AB

Future Electronics

600V UltraFast Copack Trench IGBT in a TO-220AB package

International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT, 600V, TO-220; Transistor Type:IGBT; DC Collector Current:36A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:206W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:36A; Package / Case:TO-220; Power Dissipation Max:206W; Power Dissipation Pd:206W; Power Dissipation Pd:206W; Pulsed Current Icm:72A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC