Infineon IKP20N60TXKSA1

Name: Infineon IKP20N60TXKSA1
Brand: Infineon
SKU: IKP20N60TXKSA1

600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

$ 1.03

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Arrow Electronics		IKP20N60TXKSA1	20	1		1.147	1.147	1.147	1.147	1.147
DigiKey		448-IKP20N60TXKSA1-ND	1,943		Tube
Avnet	2	IKP20N60TXKSA1	0	1K							2d
Farnell		IKP20N60TXKSA1	0	1		3.141*	1.550*	1.401*	1.070*	1.070*	20h
Microchip USA		IKP20N60TXKSA1	1,630	600	Tube				2.176	2.176	12h

Inventory History

3 month trend: -96.20%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKP20N60TXKSA1.

Infineon

Datasheet13 pages10 years ago

IHS

Upverter

Newark

element14 APAC

Inventory History

3 month trend:

-96.20%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIKP20N60TXKSA1

InfineonIRGB4061DPBF

Price @ 1000

$ 1.03

$ 1.32

Stock

452,138

130,992

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220AB

Collector Emitter Breakdown Voltage

600 V

Max Collector Current

40 A

36 A

Power Dissipation

166 W

206 W

Collector Emitter Saturation Voltage

2.05 V

1.65 V

Reverse Recovery Time

41 ns

100 ns

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2026-03-15

LTD Date2026-09-15

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Descriptions

Descriptions of Infineon IKP20N60TXKSA1 provided by its distributors.

600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

Infineon SCT

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

TodayComponents

Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

Verical

IGBT, General Purpose, 40 A, 2.05 V, 166 W, 600 V, TO-220, 3 Pins

EBV Elektronik

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Semicontronic

IGBT, N, 600V, 20A, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Ic Continuous b Max:20A; Fall Time tf:42ns; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:166W; Power Dissipation Pd:166W; Power Dissipation Pd:166W; Pulsed Current Icm:60A; Rise Time:14ns; Short Circuit Withstand Time Min:5µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon