onsemi HGTP7N60A4

Name: onsemi HGTP7N60A4
Brand: onsemi
SKU: HGTP7N60A4

Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

$ 1.305

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min
Verical	HGTP7N60A4	800	215				1.450	1.300
Rochester Electronics	HGTP7N60A4	800				1.400	1.160	1.040	9h
Farnell	HGTP7N60A4	0	1	2.070*	2.070*	2.070*	2.070*	2.070*	7h
element14 APAC	HGTP7N60A4	0	1	2.015*	1.562*	1.211*	0.945*	0.906*	3h
Win Source	WS-HGTP7N60A4	28,400	70			0.841	0.561	0.561	10h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTP7N60A4.

Upverter

Technical Drawing1 page4 years ago

IHS

Future Electronics

element14 APAC

onsemi

Inventory History

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+0.00%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-03-24

Lifecycle StatusObsolete (Last Updated: 6 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi HGTP7N60A4 provided by its distributors.

Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

Win Source

HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB

Future Electronics

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Fairchild Semiconductor