Infineon IRGB30B60KPBF

Name: Infineon IRGB30B60KPBF
Brand: Infineon
SKU: IRGB30B60KPBF

IRGB30B60KPBF, IGBT Transistor, 78 A 600 V, 3-Pin TO-220AB

$ 6.9

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRGB30B60KPBF	0	1	Bulk	7.670	6.900	6.900	6.900	6.900	11h
Farnell		IRGB30B60KPBF	0	1		3.573*	2.839*	2.459*	1.793*	1.793*	18h
Win Source	2	WS-IRGB30B60KPBF	8,340	15				3.000	2.690	2.690	19h
Worldway Electronics	2	IRGB30B60K	13,433	7	Tube		1.900	1.842	1.745	1.745	18h
Esaler Electronic		IRGB30B60K	200			2.220	2.198	2.177	2.156	2.135	5d

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB30B60KPBF.

IHS

Datasheet14 pages20 years ago

Farnell

Newark

RS (Formerly Allied Electronics)

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-31

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-02-11

LTD Date2009-08-11

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Descriptions

Descriptions of Infineon IRGB30B60KPBF provided by its distributors.

IRGB30B60KPBF, IGBT Transistor, 78 A 600 V, 3-Pin TO-220AB

RS (Formerly Allied Electronics)

Trans IGBT Chip N-CH 600V 78A 3-Pin(3+Tab) TO-220AB

Avnet

600V UltraFast 10-30 kHz IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, 600V, 78A, TO-220; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:370W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:78A; Fall Time Max:40ns; Fall Time tf:40ns; Package / Case:TO-220AB; Power Dissipation Max:370W; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulsed Current Icm:120A; Rise Time:28ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC