Infineon IRG4BC20KD-SPBF

Name: Infineon IRG4BC20KD-SPBF
Brand: Infineon
SKU: IRG4BC20KD-SPBF

IRG4BC20KD-S Series 600 V 9 A N-Channel UltraFast IGBT - D2PAK-3

$ 4.75

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC20KD-SPBF	0	5	Bulk		5.280	4.750	4.750	4.750	11h
Microchip USA	2	IRG4BC20KD-S	257	600	Tube				2.679	2.679	3d
Win Source	2	WS-IRG4BC20KDS	800	2			24.750	21.450	21.450	21.450	23h
Worldway Electronics	3	IRG4BC20KDS	22,949	7			5.035	4.940	4.750	4.655	21h
IC Components Ltd.		IRG4BC20KD-S	2,260			4.020	4.020	4.020	4.020	4.020	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC20KD-SPBF.

IHS

Datasheet11 pages21 years ago

Datasheet11 pages25 years ago

Newark

iiiC

DigiKey

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-24

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

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Descriptions

Descriptions of Infineon IRG4BC20KD-SPBF provided by its distributors.

IRG4BC20KD-S Series 600 V 9 A N-Channel UltraFast IGBT - D2PAK-3

Future Electronics

Trans IGBT Chip N-CH 600V 16A 3-Pin(2+Tab) D2PAK

Avnet

Copacked 600V IGBT in a D2-Pak package with 8-25 kHz ultrafast, ultrasoft recovery antiparallel diode, D2PAKCOPAK, RoHS

Infineon SCT

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

IHS

IGBT, 16A I(C), 600V V(BR)CES, N

Easev

IRG4BC20 - DISCRETE IGBT WITH AN

DigiKey Marketplace

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

Win Source

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:16A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:60W; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark