Infineon IRG4BC20UD-SPBF

Name: Infineon IRG4BC20UD-SPBF
Brand: Infineon
SKU: IRG4BC20UD-SPBF

Trans IGBT Chip N-CH 600V 13A 3-Pin(2+Tab) D2PAK Tube

$ 3.96

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC20UD-SPBF	0	250	Bulk				3.960	3.490	13h
Microchip USA		IRG4BC20UD-S	177	600	Tray				1.040	1.040	3d
Component Stockers USA		IRG4BC20UD-SPBF	586			99.990	99.990	99.990	99.990	99.990	14h
Win Source	2	WS-IRG4BC20UD-S	20	45				1.177	0.785	0.785	1d
Worldway Electronics	3	IRG4BC20UD-SPBF	19,305	7	Tube		4.198	4.118	3.960	3.881	22h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC20UD-SPBF.

IHS

Datasheet11 pages16 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-01-19

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

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Descriptions

Descriptions of Infineon IRG4BC20UD-SPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 13A 3-Pin(2+Tab) D2PAK Tube

Verical

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) | IGBT 600V 13A 60W D2PAK

Win Source

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:13A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:60W; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

IGBT, D2-PAK; Transistor type:IGBT; Voltage, Vces:600V; Current, Ic continuous a max:13A; Voltage, Vce sat max:2.1V; Power dissipation:60W; Case style:D2-PAK (TO-263); Case style, alternate:TO-263; Current, Icm pulsed:52A; Pins, No. of:3; Power, Pd:60W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Time, fall:220ns; Time, fall typ:220ns; Time, rise:17ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V

Farnell