HGT1S3N60A4DS9A by onsemi

onsemi HGT1S3N60A4DS9A

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB

$ 1.564

Obsolete

Price and Stock

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	Distributor		SKU		Min	Pkg
	Verical	5	HGT1S3N60A4DS9A	1,356	193					1.738	1.638
	Rochester Electronics		HGT1S3N60A4DS9A	4,713					1.560	1.390	1.310	18h
	Worldway Electronics		HGT1S3N60A4DS9A	10,341	7	Tube		0.495	0.480	0.455	0.455	20h
	Anlinkda		HGT1S3N60A4DS9A	17,803			2.151	1.926	1.648	1.617	1.545	2h
	SHENGYU ELECTRONICS		HGT1S3N60A4DS9A	14,116	1		1.732	1.697	1.650	1.590	1.520	1d

Inventory History

3 month trend: Restocked

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGT1S3N60A4DS9A.

IHS

Datasheet0 pages0 years ago

Mouser

Inventory History

3 month trend:

Restocked

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of onsemi HGT1S3N60A4DS9A provided by its distributors.

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB

PWR IGBT 7A,600V,SMPS SERIES N-CH W/DIODE TO-263AB

IGBTs 600V, N-Channel IGBT SMPS Series

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Images

Rochester Electronics

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Inventory History

3 month trend: Restocked

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageTO-263-3

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Collector Emitter Breakdown Voltage600 V

Collector Emitter Saturation Voltage2 V

Collector Emitter Voltage (VCEO)600 V

Element ConfigurationSingle

Fall Time100 ns

Max Collector Current17 A

Max Operating Temperature150 °C

Max Power Dissipation70 W

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation70 W

Reverse Recovery Time19 ns

Rise Time15 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGT1S3N60A4DS9A.

IHS

Datasheet0 pages0 years ago

Mouser

Compliance

Environmental Classification

REACH SVHCNo

RoHSCompliant

Compliance Statements

Reach Statement8 pages11 years ago

Rohs Statement1 page12 years ago

Rohs Statement1 page14 years ago

Reach Statement2 pages13 years ago