Infineon IRFZ46NLPBF

Name: Infineon IRFZ46NLPBF
Brand: Infineon
SKU: IRFZ46NLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.0165 Ohm; Id 53A; TO-262; Pd 107W; Vgs +/-20V

$ 0.654

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFZ46NLPBF	3,730					0.762	0.633	0.564	2d
RS (Formerly Allied Electronics)	IRFZ46NLPBF	0	700	Bulk				2.810	2.560	7h
Farnell	IRFZ46NLPBF	0	1		1.370*	1.097*	0.785*	0.513*	0.502*	18h
Mouser	942-IRFZ46NLPBF	729	1	Tube	2.160	1.380	0.955	0.675	0.643
Microchip USA	IRFZ46NL	304	600	Tube				1.061	1.061	10h

Inventory History

3 month trend: -0.33%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ46NLPBF.

IHS

Datasheet12 pages22 years ago

Datasheet11 pages22 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

-0.33%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFZ46NLPBF

InfineonAUIRFZ46NL

Price @ 1000

$ 0.654

$ 2.37

Stock

543,360

55,758

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

39 A

Threshold Voltage

4 V

Rds On Max

16.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

107 W

Input Capacitance

1.696 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRFZ46NLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon