Infineon IRFZ46NLPBF
$ 0.668
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -0.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.668
$ 2.37
Stock
562,617
75,895
Authorized Distributors
3
1
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
39 A
39 A
Threshold Voltage
4 V
-
Rds On Max
16.5 mΩ
16.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
107 W
Input Capacitance
1.696 nF
1.696 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Related Parts
InfineonIRFZ44NLPBF
MOSFET N-CH 55V 49A TO262 "N-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262"
Descriptions
Descriptions of Infineon IRFZ46NLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
MOSFET N-CH 55V 53A TO262 "N-Channel 55 V 53A (Tc) 3.8W (Ta), 107W (Tc) Through Hole TO-262"
Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262
3.8W(Ta)，107W(Tc) 20V 4V@ 250µA 72nC@ 10 V 1individualNChannel 55V 16.5mΩ@ 28A,10V 53A 1.696nF@25V TO-262 Through hole mounting 6.5mm*6.22mm*2.3mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)39 A
Current Rating53 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16.5 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.696 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance16.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max16.5 mΩ
Rise Time76 ns
Threshold Voltage4 V
Turn-Off Delay Time52 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements