Infineon IRFSL3806PBF

Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-262-3

MOSFET N-CH 60V 43A TO262 N-Channel 60 V 43A (Tc) 71W (Tc) Through Hole TO-262

60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

71W(Tc) 20V 4V@ 50µA 30nC@ 10 V 1individualNChannel 60V 15.8mΩ@ 25A,10V 43A 1.15nF@50V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm

MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-262; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .