Infineon IRFR3607TRPBF

Name: Infineon IRFR3607TRPBF
Brand: Infineon
SKU: IRFR3607TRPBF

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3

$ 0.787

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	25R3336	1	1		2.290	1.530	1.090	0.999	0.999	6h
Newark	2	IRFR3607TRPBF	1	1	Cut Tape	2.290	1.530	1.090	0.999	0.999
Future Electronics	3	IRFR3607TRPBF	50,000	2K	Tape & Reel					0.585
Rutronik		TMOSP12296	152,000	2K						0.463	12h
Rochester Electronics		IRFR3607TRPBF	25,069					0.773	0.642	0.572	4h

Inventory History

3 month trend: -2.11%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR3607TRPBF.

Newark

Datasheet10 pages16 years ago

Datasheet11 pages16 years ago

element14 APAC

iiiC

Inventory History

3 month trend:

-2.11%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR3607TRPBF

InfineonAUIRFR3607

Price @ 1000

$ 0.787

$ 2.52

Stock

2,110,449

121,360

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

2 V

Rds On Max

9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

3.07 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR3607TRPBF provided by its distributors.

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:56A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR3607TRPBF.

Newark

MOSFET, N CH, 75V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon