Infineon IRFR220NTRPBF

Name: Infineon IRFR220NTRPBF
Brand: Infineon
SKU: IRFR220NTRPBF

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 600 Milliohms; ID 5A; D-Pak (TO-252AA); PD 43W

$ 0.449

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRFR220NTRPBF	2,000	2K						0.231	5h
Newark	3	IRFR220NTRPBF	771	1	Cut Tape	1.360	0.888	0.617	0.559	0.559
Future Electronics	2	IRFR220NTRPBF	36,000	2K	Tape & Reel					0.510
Arrow Electronics	2	IRFR220NTRPBF	5,130	1		0.969	0.701	0.504	0.358	0.300
DigiKey	3	IRFR220NTRPBFCT-ND	4,602	1	Cut Tape	1.540	0.965	0.636	0.449	0.449

Inventory History

3 month trend: -6.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR220NTRPBF.

Newark

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Datasheet11 pages25 years ago

Datasheet10 pages21 years ago

Upverter

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

-6.55%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR220NTRPBF

InfineonIRFR220NTRLPBF

Price @ 1000

$ 0.449

$ 0.389

Stock

1,336,460

323,713

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

5 A

Threshold Voltage

4 V

Rds On Max

600 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

43 W

Input Capacitance

300 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR220NTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W

RS (Formerly Allied Electronics)

Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:43W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR220NTRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 43

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