Infineon IPD5N25S3430ATMA1
$ 0.684
Production
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Min
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Inventory History
3 month trend: -3.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD5N25S3430ATMA1.
CAD Models
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Supply Chain
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
InfineonIRFR220NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Descriptions
Descriptions of Infineon IPD5N25S3430ATMA1 provided by its distributors.
250V, N-Ch, 430 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 5A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N-Ch, 250V, 5A, To-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.37Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPD5N25S3430ATMA1
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -3.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Drain to Source Resistance430 mΩ
Drain to Source Voltage (Vdss)250 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance422 pF
Max Dual Supply Voltage250 V
Max Operating Temperature175 °C
Max Power Dissipation41 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity2500
PackagingTape & Reel
Power Dissipation41 W
Rds On Max430 mΩ
Rise Time2 ns
Schedule B8541290080
Turn-Off Delay Time8 ns
Turn-On Delay Time3 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD5N25S3430ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements