FDD6N20TF by onsemi

onsemi FDD6N20TF

Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Obsolete

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	Distributor		SKU		Min	Pkg
	Worldway Electronics		FDD6N20TF	28,256	7	Tape & Reel		0.382	0.370	0.351	0.351	9h
	Anlinkda		FDD6N20TF	62,447			0.260	0.233	0.211	0.205	0.201	17h
	RC Electronics		FDD6N20TF	40,888	1		0.460	0.420	0.380	0.370	0.350	>1wk
	ZTZ Technology Limited		FDD6N20TF	22,800			0.451	0.412	0.372	0.363	0.343	3d
	SHENGYU ELECTRONICS		FDD6N20TF	10,961	1		0.193	0.189	0.180	0.180	0.170	3d

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD6N20TF.

IHS

Datasheet9 pages21 years ago

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-06-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-12-02

LTD Date2009-06-02

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Descriptions

Descriptions of onsemi FDD6N20TF provided by its distributors.

Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-CH 200V 4.5A D-PAK

N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount D-Pak

MOSFETs 200V N-CH MOSFET

N-CHANNEL POWER MOSFET

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageTO-252-3

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)4.5 A

Drain to Source Breakdown Voltage200 V

Drain to Source Resistance800 mΩ

Drain to Source Voltage (Vdss)200 V

Element ConfigurationSingle

Fall Time12.8 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance230 pF

Max Operating Temperature150 °C

Max Power Dissipation40 W

Min Breakdown Voltage200 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation40 W

Rds On Max800 mΩ

Rise Time5.6 ns

Turn-Off Delay Time15 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD6N20TF.

IHS

Datasheet9 pages21 years ago

Compliance

Environmental Classification

REACH SVHCYes

RoHSCompliant

Compliance Statements

Reach Statement8 pages11 years ago

Rohs Statement1 page12 years ago

Rohs Statement1 page14 years ago

Reach Statement2 pages13 years ago