Infineon IRFB3077PBF

Name: Infineon IRFB3077PBF
Brand: Infineon
SKU: IRFB3077PBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 2.8MILLIOHMS; Id 210A; TO-220AB; Pd 370W; -55DE

$ 1.696

Production

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Distributor		SKU		Min	Pkg
Avnet	2	25M9790	850	1		4.520	3.000	2.120	1.900	1.900	5d
Newark		IRFB3077PBF	1,552	1		4.520	2.990	2.120	1.650	1.650
Future Electronics	2	IRFB3077PBF	1,500	50	Tube			2.210	2.150	2.100
Arrow Electronics	2	IRFB3077PBF	7,383	1		4.222	2.853	2.042	1.599	1.599
Rochester Electronics	2	IRFB3077PBF	29,856					1.610	1.440	1.350	12h

Inventory History

3 month trend: -41.24%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB3077PBF.

ODG (Origin Data Global)

Datasheet8 pages15 years ago

Newark

TME

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-41.24%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-10-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFB3077PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 75 V 3.3 mOhm 220 nC 3HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 75V 210A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W

Distrelec

N CH MOSFET, 75V, 210A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:240mJ; Capacitance Ciss Typ:9400pF; Cont Current Id @ 100°C:150A; Cont Current Id @ 25°C:210A; Current Id Max:210A; Package / Case:TO-220AB; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:850A; Rth:0.4; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Infineon