Infineon IRFB3077GPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
$ 4.13
Obsolete
Price and Stock
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Inventory History
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-05
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2014-05-05
LTD Date2014-11-05
Related Parts
InfineonIRFB3077PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de
InfineonIRF3808PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de
InfineonIRF1407PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20
Descriptions
Descriptions of Infineon IRFB3077GPBF provided by its distributors.
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 75V, 210A, 3.3 MOHM, 160 NC QG,TO-220AB, HALOGEN-FREE
Trans MOSFET N-CH 75V 210A 3-Pin (3+Tab) TO-220AB
Power Field-Effect Transistor, 120A I(D), 75V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:210A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation370 W
Rds On Max3.3 mΩ
Rise Time87 ns
Threshold Voltage4 V
Turn-Off Delay Time69 ns
Turn-On Delay Time25 ns
Dimensions
Height20.57 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements