Infineon IRF4905LPBF

Name: Infineon IRF4905LPBF
Brand: Infineon
SKU: IRF4905LPBF

MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 20Milliohms; ID -70A; TO-262; PD 170W; gFS 19S

$ 1.232

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		IRF4905LPBF	4,435	1		3.510	3.190	2.640	1.940	1.940
Future Electronics	2	IRF4905LPBF	2,000	50	Tube			1.890	1.840	1.800
Arrow Electronics		IRF4905LPBF	9,213	1		1.431	1.431	1.333	1.037	1.037
Rochester Electronics	2	IRF4905LPBF	1,290					1.460	1.210	1.080	1d
DigiKey		448-IRF4905LPBF-ND	6,118	1	Tube	3.610	3.610	1.638	1.233	1.075

Inventory History

3 month trend: -0.11%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF4905LPBF.

IHS

Datasheet12 pages20 years ago

Datasheet13 pages20 years ago

Datasheet11 pages28 years ago

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

-0.11%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF4905LPBF

InfineonAUIRF4905L

Price @ 1000

$ 1.232

$ 1.77

Stock

267,147

72,879

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262

Drain to Source Voltage (Vdss)

-55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

4 V

Rds On Max

20 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.5 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-25

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRF4905LPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;TO-262;PD 170W;gFS 19S

RS (Formerly Allied Electronics)

Transistor MOSFET P Channel 55 Volt 74 Amp 3-Pin 3+ Tab TO-262

Jameco

Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -42 A, TO-262, IRF4905LPBF

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Single P-Channel 55 V 20 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET, P CH, 55V, 74A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:55V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-74A; Package / Case:TO-262; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -42 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 64 / Rise Time ns = 99 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170

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