Infineon IRF3710PBF

Name: Infineon IRF3710PBF
Brand: Infineon
SKU: IRF3710PBF

Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB

$ 0.762

Production

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	2	IRF3710PBF	975	1		1.970	1.052	0.734	0.734	0.734	2d
Newark	2	IRF3710PBF.	975	1		2.380	1.560	1.050	0.790	0.790
Future Electronics	2	IRF3710PBF	31,050	50	Tube			0.765	0.725	0.690
Arrow Electronics	2	IRF3710PBF	19,753	1		2.105	1.443	0.960	0.700	0.646
DigiKey		IRF3710PBF-ND	838	1	Tube	2.560	1.643	1.121	0.825	0.671

Inventory History

3 month trend: -2.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3710PBF.

IHS

Datasheet9 pages15 years ago

Datasheet8 pages16 years ago

Newark

Verical

Sierra IC

iiiC

Inventory History

3 month trend:

-2.83%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-07-15

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRF3710PBF provided by its distributors.

Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB

Jameco

Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 57 A, TO-220, IRF3710PBF

Burklin Elektronik

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

Avnet

Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF

Rapid Electronics

MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB

Master Electronics

Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 100V, 57A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF3710PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

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