Infineon IRFB4510PBF

Name: Infineon IRFB4510PBF
Brand: Infineon
SKU: IRFB4510PBF

Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3

$ 0.659

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Distributor		SKU		Min	Pkg
Newark		IRFB4510PBF	1,025	1		2.030	1.320	1.070	0.649	0.645
Arrow Electronics	2	IRFB4510PBF	2,603	1		1.861	1.236	0.949	0.674	0.667
Rutronik		TMOSP12894	1,700	50				0.673	0.539	0.539	19h
Rochester Electronics	2	IRFB4510PBF	145					0.743	0.617	0.550	11h
DigiKey		IRFB4510PBF-ND	1	1	Tube	2.210	1.409	0.953	0.695	0.550

Inventory History

3 month trend: -1.97%

CAD Models

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Datasheets & Documents

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IHS

Datasheet9 pages14 years ago

Farnell

Inventory History

3 month trend:

-1.97%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRFB4510PBF provided by its distributors.

Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

High Efficiency Synchronous Rectification in SMPS | MOSFET N CH 100V 62A TO220AB

Win Source

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 62A 3-Pin(3+Tab) TO-220AB Tube

Verical

Transistor MOSFET N-ch 100V 44A TO-220AB

RS (Formerly Allied Electronics)

HEXFET Power MOSFET Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET N CH 100V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 62 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 10.7 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140

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