Infineon IRF3710ZPBF

Name: Infineon IRF3710ZPBF
Brand: Infineon
SKU: IRF3710ZPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; TO-220AB; Pd 160W; -55DEG

$ 0.576

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRF3710ZPBF	3,626	1		2.130	1.370	0.923	0.675	0.675
Arrow Electronics	2	IRF3710ZPBF	3,024	1		2.010	1.314	0.894	0.576	0.576
Rutronik		TMOSP11776	26,650	50				0.686	0.549	0.549	19h
DigiKey		IRF3710ZPBF-ND	3,415	1	Tube	2.280	1.458	0.988	0.722	0.573
Avnet		IRF3710ZPBF	0	50				0.518	0.504	0.504	5d

Inventory History

3 month trend: +4.99%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3710ZPBF.

Newark

Datasheet12 pages15 years ago

Datasheet12 pages22 years ago

IHS

iiiC

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

+4.99%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3710ZPBF

InfineonAUIRF3710Z

Price @ 1000

$ 0.576

$ 4.29

Stock

596,635

64,215

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

59 A

Threshold Voltage

4 V

2 V

Rds On Max

18 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

160 W

Input Capacitance

2.9 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-05-10

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF3710ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 3+ Tab TO-220AB

Jameco

Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

Distrelec

AUTOMOTIVE HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF3710ZPBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:18mohm; Package / Case:TO-220AB; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Power Dissipation Ptot Max:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

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