onsemi HUF75639P3

Name: onsemi HUF75639P3
Brand: onsemi
SKU: HUF75639P3

Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB

$ 1.29

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
DigiKey	HUF75639P3-ND	1	1	Tube	3.300	3.300	1.494	1.124	1.044
Rochester Electronics	HUF75639P3	2					1.420	1.180	1.050	13h
Newark	HUF75639P3	0	200					1.790	1.490
Onlinecomponents.com	HUF75639P3	0	50	Bulk			1.650	1.290	1.110
Avnet	HUF75639P3	0	800					1.039	0.989	15h

Inventory History

3 month trend: -23.86%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HUF75639P3.

IHS

Datasheet15 pages3 years ago

Farnell

Upverter

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-23.86%

Alternate Parts

This Part

Alternate Parts

onsemiHUF75639P3

onsemiHUF75639P3_NL

Price @ 1000

$ 1.29

$ 1.16

Stock

176,740

27,640

Authorized Distributors

Mount

Through Hole

Case/Package

TO-263-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

4 V

Rds On Max

25 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

2 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi HUF75639P3 provided by its distributors.

Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB

Jameco

N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

Future Electronics

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

onsemi

Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail

Verical

100 V, 56 A, 0.025 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Farnell

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Fairchild Semiconductor