onsemi FDP3652

Name: onsemi FDP3652
Brand: onsemi
SKU: FDP3652

Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

$ 0.87

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FDP3652	209			1.040	0.863	0.770	10h
Newark		FDP3652	0	250			1.020	0.798
Onlinecomponents.com		FDP3652	0	50	Bulk	0.916	0.797	0.749
Master Electronics		FDP3652	0	50		0.916	0.797	0.749
Avnet		FDP3652	0	1600				0.808	5d

Inventory History

3 month trend: +30.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDP3652.

Upverter

Technical Drawing1 page6 years ago

Newark

IHS

element14 APAC

onsemi

Inventory History

3 month trend:

+30.55%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-04-30

Lifecycle StatusNRND (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDP3652 provided by its distributors.

Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

Verical

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

onsemi

N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

Future Electronics

100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC